AO4443 40v p-channel mosfet general description product summary v ds i d (at v gs =-10v) -6a r ds(on) (at v gs =-10v) < 42m w r ds(on) (at v gs =-4.5v) < 63m w 100% uis tested 100% r g tested symbol v ds the AO4443 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -40v drain-source voltage -40 soic-8 top view bottom view pin1 g ds v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl t a =70c 2 w units thermal characteristics parameter typ max mj junction and storage temperature range -55 to 150 c power dissipation b v drain-source voltage -40 gate-source voltage -5 t a =25c t a =70c continuous drain current i d a 20 v 20 -6 -40 a maximum junction-to-ambient a d 16 75 pulsed drain current c 3.1 t a =25c avalanche current c 20 p d avalanche energy l=0.1mh c c/w r q ja 24 maximum junction-to-ambient a 31 59 40 maximum junction-to-lead c/w c/w rev 4: august 2011 www.aosmd.com page 1 of 5
AO4443 symbol min typ max units bv dss -40 v v ds =-40v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.5 -2 -2.6 v i d(on) 40 a 35 42 t j =125c 53 65 46.5 63 m w g fs 17 s v sd -0.76 -1 v i s -3.5 a c iss 750 940 1175 pf c oss 97 pf c rss 72 pf r g 7 14 21 w q g(10v) 17.3 22 nc qg (4.5v) 8.4 11 q gs 3.2 nc q gd 4.3 nc t d(on) 10.3 ns t 4.3 ns v gs =0v, v ds =-20v, f=1mhz switching parameters v ds =v gs i d =-250 m a v gs =-4.5v, i d =-5a forward transconductance v gs =-10v, i d =-6a reverse transfer capacitance maximum body-diode continuous current m w v = - 10v, v = -20 v, dynamic parameters turn-on delaytime gate resistance v gs =0v, v ds =0v, f=1mhz v ds =-5v, i d =-6a r ds(on) static drain-source on-resistance total gate charge v gs =-10v, v ds =-20v, i d =-6a gate source charge gate drain charge i s =-1a,v gs =0v diode forward voltage input capacitance output capacitance turn-on rise time electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v ds =0v, v gs =20v gate-body leakage current t r 4.3 ns t d(off) 39 ns t f 46.5 ns t rr 17 24 ns q rr 11.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =-6a, di/dt=100a/ m s body diode reverse recovery charge body diode reverse recovery time i f =-6a, di/dt=100a/ m s v gs = - 10v, v ds = -20 v, r l =3.35 w , r gen =3 w turn-off delaytime turn-off fall time turn-on rise time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: august 2011 www.aosmd.com page 2 of 5
AO4443 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 30 35 40 45 50 55 60 65 0 3 6 9 12 15 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-10v i d =-6a v gs =-4.5v i d =-5a 25 c 125 c v ds =-5v v gs =-4.5v 0 10 20 30 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -7v -10v -4v -4.5v -5v v gs =-10v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-6a 25 c 125 c rev 4: august 2011 www.aosmd.com page 3 of 5
AO4443 typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 15 18 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 40 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-20v i d =-6a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction - to - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 10: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 11: single pulse power rating junction - to - ambient (note f) figure 10: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w single pulse rev 4: august 2011 www.aosmd.com page 4 of 5
AO4443 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 4: august 2011 www.aosmd.com page 5 of 5
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